发明名称 SPIN TRANSFER TORQUE MAGNETIC STORAGE ELEMENT WITH LOW WRITE ERROR RATE
摘要 A storage element includes a magnetization fixed layer, and a magnetization free layer. The magnetization fixed layer includes a plurality of ferromagnetic layers laminated together with a coupling layer formed between each pair of adjacent ferromagnetic layers. The magnetization directions of the ferromagnetic layers are inclined with respect to a magnetization direction of the magnetization fixed layer.
申请公布号 KR20140098752(A) 申请公布日期 2014.08.08
申请号 KR20147013771 申请日期 2012.11.19
申请人 SONY CORPORATION 发明人 HIGO YUTAKA;HOSOMI MASANORI;OHMORI HIROYUKI;BESSHO KAZUHIRO;ASAYAMA TETSUYA;YAMANE KAZUTAKA;UCHIDA HIROYUKI
分类号 G11C11/16;H01F10/32 主分类号 G11C11/16
代理机构 代理人
主权项
地址