| 摘要 |
A method of fabricating a semiconductor IC is disclosed. The method includes receiving a device. The device includes a semiconductor substrate, a plurality of fins and trenches between fins in the semiconductor substrate. The method also includes filling the trenches with a dielectric material to form shallow trench isolations (STI), applying a low-thermal-budget annealing to the dielectric material, and applying a wet-treatment to the dielectric material. |
