发明名称 |
DOUBLE STEPPED SEMICONDUCTOR SUBSTRATE |
摘要 |
<p>A method of forming a double stepped surface on a semiconductor substrate includes a step of forming a rough surface on a semiconductor substrate by using etching process used in a metal-organic chemical vapor deposition (MOCVD) process. The method further includes a step of forming a double step surface on the semiconductor substrate by using an annealing process used in the MOCVD process.</p> |
申请公布号 |
KR20140098664(A) |
申请公布日期 |
2014.08.08 |
申请号 |
KR20130155400 |
申请日期 |
2013.12.13 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN MENG KU;LIN HUNG TA;CHANG HUICHENG |
分类号 |
H01L21/20 |
主分类号 |
H01L21/20 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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