发明名称 DOUBLE STEPPED SEMICONDUCTOR SUBSTRATE
摘要 <p>A method of forming a double stepped surface on a semiconductor substrate includes a step of forming a rough surface on a semiconductor substrate by using etching process used in a metal-organic chemical vapor deposition (MOCVD) process. The method further includes a step of forming a double step surface on the semiconductor substrate by using an annealing process used in the MOCVD process.</p>
申请公布号 KR20140098664(A) 申请公布日期 2014.08.08
申请号 KR20130155400 申请日期 2013.12.13
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 CHEN MENG KU;LIN HUNG TA;CHANG HUICHENG
分类号 H01L21/20 主分类号 H01L21/20
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