| 摘要 |
To reduce the loss of the quantity of light and reduce resistance when an ohmic layer is deposited, a light emitting device according to an embodiment includes a substrate; a light emitting structure which is arranged on the substrate and has a first semiconductor layer, an active layer, and a second semiconductor layer. The active layer is made of at least one or two among GaAsInP series, AlGaInP series, or AlInP series and includes an ion implantation layer which is formed on the light emitting structure and is formed by the ion implantation of an impurity. |
