发明名称 USING MODELING TO DETERMINE WAFER BIAS ASSOCIATED WITH A PLASMA SYSTEM
摘要 A system and a method for determining a wafer bias are described. One of the methods comprises a step of detecting an output of a generator in order to distinguish an output complex voltage and a current (V&I) of the generator. The generator is coupled to an impedance matching circuit, and the impedance matching circuit is coupled to an electrostatic chuck (ESC). The method further comprises a step of determining complex V&I predicted from the generator output complex V&I at a point following a path between outputs of a model of the impedance matching circuit and a model of the ESC. An operation of determining the predicted complex V&I is performed using a model on at least a portion of the path. The method comprises a step of applying the complex V&I predicted as an input to a function such that the complex V&I predicted in an ESC model is mapped to a wafer bias value.
申请公布号 KR20140098715(A) 申请公布日期 2014.08.08
申请号 KR20140012332 申请日期 2014.02.03
申请人 LAM RESEARCH CORPORATION 发明人 VALCORE JR. JOHN C.;LYNDAKER BRADFORD J.
分类号 H01L21/3065;H01L21/205 主分类号 H01L21/3065
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