| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor nonvolatile storage circuit that can be shipped after confirming the on-current difference (margin) itself of a transistor pair forming a memory, and that can increase the reliability of a product by more strictly performing a test of the product during manufacture and at pre-shipment.SOLUTION: A semiconductor nonvolatile storage circuit includes: a pair of a first transistor N11 and a second transistor N22 that forms a memory cell CEL <1>; a sense amplifier SA that generates an output signal of a logic level according to the high and low relation between a first on-current I1, 20μA, flowing through the first transistor and a second on-current I2, 50μA, flowing through the second transistor; and a test circuit TEST that controls whether or not to apply an offset 20-40μA to the first on-current I1 and whether or not to apply the offset 20-40μA to the second on-current I2, individually.</p> |
