| 摘要 |
<p>PROBLEM TO BE SOLVED: To improve the characteristics of a semiconductor device.SOLUTION: An upper part of a silicon oxide film, constituting an element isolation insulating film STI in a bulk region BA, is moved back so that an upper surface of the silicon oxide film constituting the element isolation insulating film STI in the bulk region BA becomes lower than an upper surface of the silicon oxide film constituting the element isolation insulating film STI in an SOI region SA. Then, an insulating layer BOX and a silicon layer SR in the bulk region are removed. An SOI-MISFET is formed on the principal surface of the silicon layer SR in the SOI region SA, and a low-breakdown-voltage MISFET or a high-breakdown-voltage MISFET is formed on the principal surface of a support substrate S in the bulk region BA. In this way, in the process of adjusting the height of the element isolation insulating film STI, the height of the element isolation insulating film STI in the SOI region SA and the height of the element isolation insulating film STI in the bulk region BA are individually adjusted. Therefore, the characteristics of the semiconductor device can be improved in a way such that a leak current of the SOI-MISFET is reduced.</p> |
