发明名称 |
FOUR CAPACITOR NONVOLATILE BIT CELL |
摘要 |
<p>A system on chip (SoC) provides a memory array of nonvolatile bit cells. Each bit cell includes two ferroelectric capacitors C1, C2 connected in series between a first plate line PL1 and a second plate line PL2, such that a node Q (404) is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to a first voltage while the bit cell is not being accessed. A clamping circuit (406) is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to the first voltage while the bit cell is not being accessed.</p> |
申请公布号 |
WO2014120906(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
WO2014US13815 |
申请日期 |
2014.01.30 |
申请人 |
TEXAS INTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED |
发明人 |
BARTLING, STEVEN, CRAIG;KHANNA, SUDHANSHU |
分类号 |
G11C11/22;H01G7/06 |
主分类号 |
G11C11/22 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|