发明名称 FOUR CAPACITOR NONVOLATILE BIT CELL
摘要 <p>A system on chip (SoC) provides a memory array of nonvolatile bit cells. Each bit cell includes two ferroelectric capacitors C1, C2 connected in series between a first plate line PL1 and a second plate line PL2, such that a node Q (404) is formed between the two ferroelectric capacitors. The first plate line and the second plate line are configured to provide a voltage approximately equal to a first voltage while the bit cell is not being accessed. A clamping circuit (406) is coupled to the node Q and is operable to clamp the node Q to a voltage approximately equal to the first voltage while the bit cell is not being accessed.</p>
申请公布号 WO2014120906(A1) 申请公布日期 2014.08.07
申请号 WO2014US13815 申请日期 2014.01.30
申请人 TEXAS INTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED 发明人 BARTLING, STEVEN, CRAIG;KHANNA, SUDHANSHU
分类号 G11C11/22;H01G7/06 主分类号 G11C11/22
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