METHOD FOR EXTRACTING INTRINSIC SUBGAP DENSITY OF STATES OF AMORPHOUS OXIDE SEMICONDUCTOR THIN-FILM TRANSISTOR USING CHANNEL CONDUCTION FACTOR AND APPARATUS THEREOF
摘要
<p>A method for extracting intrinsic subgap density of states of an amorphous oxide semiconductor thin film transistor using a channel conduction factor, and a device thereof are disclosed. The method for extracting the intrinsic subgap density of states of the amorphous oxide semiconductor thin film transistor according to an embodiment of the present invention comprises a step of measuring capacitance according to a gate voltage of the thin film transistor; a step of extracting a conduction factor of a channel according to the gate voltage using the measured capacitance; and a step of extracting intrinsic subgap density of states based on the conduction factor of the extracted channel. The step of extracting the intrinsic subgap density of states replaces a physical length between source and drain electrodes with a length of a variable of the conduction factor of the channel and extracts the intrinsic subgap density of states considering the conduction factor of the channel.</p>
申请公布号
KR101427713(B1)
申请公布日期
2014.08.07
申请号
KR20130112514
申请日期
2013.09.23
申请人
KOOKMIN UNIVERSITY INDUSTRY ACADEMY COOPERATION FOUNDATION
发明人
KIM, DONG MYONG;KIM, DAE HWAN;CHOI, HYUN JUN;BAE, HAG YOUL;HWANG, JUN SEOK;AHN, JAE YEOP