发明名称 METHOD OF MANUFACTURING NITRIDE SUBSTRATE
摘要 <p>PROBLEM TO BE SOLVED: To provide a method of manufacturing a nitride substrate in which the nitride substrate having an off angle of a surface controlled is manufactured in an improved yield, and the nitride substrate.SOLUTION: A method of manufacturing a nitride substrate (10) includes the following processes. A nitride crystal is grown first. Then the nitride substrate (10) having a surface (11) is cut out of the nitride crystal. In the cutting process, the nitride substrate (10) is cut out so that the off angle between an axis orthogonal to the surface (11) and an (m) axis or (a) axis is larger than 0. When the nitride crystal is grown in a (c)-axial direction, the cutting process includes cutting the nitride substrate (10) out of the nitride crystal along a plane which passes a top surface and a reverse surface of the nitride crystal and does not passes a segment connecting centers of radii of curvature of the top surface and reverse surface of the nitride crystal.</p>
申请公布号 JP2014141413(A) 申请公布日期 2014.08.07
申请号 JP20140101578 申请日期 2014.05.15
申请人 SUMITOMO ELECTRIC IND LTD 发明人 ARAKAWA SATOSHI;MIYANAGA TOMOMASA;SAKURADA TAKASHI;YAMAMOTO YOSHIYUKI;NAKAHATA HIDEAKI
分类号 C30B33/00;C30B29/38 主分类号 C30B33/00
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