发明名称 PHOTOMASKS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME
摘要 The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided.
申请公布号 US2014220481(A1) 申请公布日期 2014.08.07
申请号 US201314136560 申请日期 2013.12.20
申请人 Samsung Electronics Co., Ltd. 发明人 Kim Mun Ja;Lee Donggun;Kim Seongsue
分类号 G03F1/48 主分类号 G03F1/48
代理机构 代理人
主权项 1. A photomask comprising: a substrate; patterns disposed on the substrate; and an anti-contamination layer disposed on the patterns, the anti-contamination layer including at least one graphene layer.
地址 Suwon-si KR