发明名称 |
PHOTOMASKS AND METHODS OF FABRICATING SEMICONDUCTOR DEVICES USING THE SAME |
摘要 |
The present inventive concept provides a photomask including a substrate, patterns disposed on the substrate, and an anti-contamination layer disposed on the patterns. The anti-contamination layer includes at least one graphene layer. Methods of fabricating a semiconductor device including the same are also provided. |
申请公布号 |
US2014220481(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201314136560 |
申请日期 |
2013.12.20 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
Kim Mun Ja;Lee Donggun;Kim Seongsue |
分类号 |
G03F1/48 |
主分类号 |
G03F1/48 |
代理机构 |
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代理人 |
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主权项 |
1. A photomask comprising:
a substrate; patterns disposed on the substrate; and an anti-contamination layer disposed on the patterns, the anti-contamination layer including at least one graphene layer. |
地址 |
Suwon-si KR |