| 发明名称 |
PROGRAMMING METHOD FOR NONVOLATILE SEMICONDUCTOR MEMORY DEVICE |
| 摘要 |
A method for programming a plurality of memory cells of a nonvolatile semiconductor memory device comprises the steps of: dividing the plurality of memory cells into M number of groups (M is an integer); successively selecting each of the M number of groups; generating M number of successive overlapping pulse signals; and programming the memory cells of the M number of groups in response to the respective M number of successive overlapping pulse signals. |
| 申请公布号 |
US2014219029(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313760969 |
申请日期 |
2013.02.06 |
| 申请人 |
ELITE SEMICONDUCTOR MEMORY TECHNOLOGY INC. |
发明人 |
TSAI Cheng-Hung |
| 分类号 |
G11C16/10 |
主分类号 |
G11C16/10 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A method for programming a plurality of memory cells of a nonvolatile semiconductor memory device, the method comprising the steps of:
dividing the plurality of memory cells into M number of groups (M is an integer); successively selecting each of the M number of groups; generating M number of successive overlapping pulse signals; and programming the memory cells of the M number of groups in to response to the respective M number of successive overlapping pulse signals. |
| 地址 |
Hsinchu TW |
