发明名称 |
IN-SITU CHARGING NEUTRALIZATION |
摘要 |
One embodiment relates to a method for processing semiconductor. In this method, a semiconductor wafer is provided. A search is carried out to determine whether overcharges exist on the surface region of the semiconductor wafer or not. Based on whether the overcharges exist or not, corona discharge is selectively induced to reduce the overcharges. Also, another technique is provided. |
申请公布号 |
KR20140097952(A) |
申请公布日期 |
2014.08.07 |
申请号 |
KR20130057111 |
申请日期 |
2013.05.21 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
WU LIN JUNG;HSU JYH SHIOU;YANG CHI MING |
分类号 |
H01L21/66;H01L21/205;H01L21/3065 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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