发明名称 IN-SITU CHARGING NEUTRALIZATION
摘要 One embodiment relates to a method for processing semiconductor. In this method, a semiconductor wafer is provided. A search is carried out to determine whether overcharges exist on the surface region of the semiconductor wafer or not. Based on whether the overcharges exist or not, corona discharge is selectively induced to reduce the overcharges. Also, another technique is provided.
申请公布号 KR20140097952(A) 申请公布日期 2014.08.07
申请号 KR20130057111 申请日期 2013.05.21
申请人 TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. 发明人 WU LIN JUNG;HSU JYH SHIOU;YANG CHI MING
分类号 H01L21/66;H01L21/205;H01L21/3065 主分类号 H01L21/66
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