HIGH PERFORMANCE THERMOELECTRIC BISMUTH NANOWIRE AND METHOD FOR FABRICATING THERMOELECTRIC NANODEVICE COMPRISING THE SAME

摘要

Provided are a single crystal thermoelectric nanowire with superb thermoelectric performance and a method for manufacturing a thermoelectric nanodevice having the same. The present invention provides a method for manufacturing a thermoelectric nanodevice comprising the following steps. A single crystal thermoelectric nanowire with an adjusted diameter smaller than or equal to 40 nm and a thermoelectric figure of merit greater than or equal to 0.5 is stacked on a substrate. A copolymer layer is formed on the substrate to include the nanowire, and an electron beam resist is formed thereon. An electron beam lithography process is performed such that portions of the copolymer layer and an electron beam resist layer are etched to expose at least a portion of the nanowire. After a surface oxide layer of the exposed nanowire is removed by using a plasma etching method in the chamber, an ohmic contact is deposited in-situ on the nanowire with the oxide layer removed, and the copolymer layer and the electron beam resist layer are removed from the nanowire. Then, an electrode is formed.