FILM DEPOSITION METHOD FOR ALUMINIUM OXIDE

摘要

PROBLEM TO BE SOLVED: To deposit oxide aluminum suitable for a passivation film of a p-type silicon substrate into a film by sputtering while making a film deposition speed higher.SOLUTION: A film deposition method for aluminum oxide includes a first plasma generation step of generating plasma in a vacuum container into which a sputter gas, a reactive gas and water vapor are introduced, and a second plasma generation step of generating magnetron plasma with a static magnetic field by applying an aluminum target with a negative voltage and a sputter voltage of one of DC pulses comprising the negative voltage and a positive voltage and an AC current. The first plasma generation step is a step of generating high-frequency induction coupling plasma at least in the second plasma generation step by using a high-frequency antenna comprising a conductor which is provided in the vacuum container and whose number of turns is less than one.