SEMICONDUCTOR DEVICE

摘要

Provided is a semiconductor device which uses a comb-like N-type MOS transistor as an ESD protection element and is capable of uniformly operating the entire comb-like N-type MOS transistor. By adjusting a length L of a gate electrode of the N-type MOS transistor used as the ESD protection element in accordance with the distance from a contact for fixing a substrate potential, which is provided on a guard ring around an outer periphery, respective portion of N-type MOS transistor represented as a comb teeth uniformly enter snap-back operation, permitting avoidance of local concentration of current and obtainment of a desired ESD tolerance.

主权项

1. A semiconductor device having an ESD protection element which utilizes an N-type MOS transistor having an integral structure of a plurality of transistors, the semiconductor device comprising:
a plurality of drain regions and a plurality of source regions alternately arranged each other; a gate electrode formed between each of the plurality of drain regions and each of the plurality of source regions; and a substrate contact to which a metal interconnecting line fixed at a ground potential is connected, the substrate contact being formed around the plurality of drain regions, the plurality of source regions, and the gate electrode, wherein a length L, which is a length of the gate electrode in a channel direction, of a comb tooth of the gate electrode formed close to the substrate contact is smaller than the L length of a comb tooth formed away from the substrate contact.