SEMICONDUCTOR DEVICE

摘要

An n-type region encloses an n-type well region is disclosed in which is disposed a high-side drive circuit. A high resistance polysilicon thin film configuring a resistive field plate structure of a high breakdown voltage junction termination region is disposed in spiral form on the n-type region. An OUT electrode, a ground electrode, and a Vcc1 electrode are disposed on the n-type region. The Vcc1 electrode is connected to the positive electrode of an auxiliary direct current power supply (a bootstrap capacitor). The OUT electrode is connected to the negative electrode of the auxiliary direct current power supply. One end portion (a second contact portion) of the high resistance polysilicon thin film is connected to the ground electrode, and the other end portion (a first contact portion) of the high resistance polysilicon thin film is connected to the OUT electrode.

主权项

1. A semiconductor device, comprising:
a second conductivity type well region, one surface of which is in contact with a first conductivity type semiconductor layer; a first conductivity type well region in contact with the second conductivity type well region and enclosing the second conductivity type well region; a second conductivity type high concentration region provided in the second conductivity type well region and having an impurity concentration higher than that of the second conductivity type well region; a first conductivity type high concentration region provided in the first conductivity type well region and having an impurity concentration higher than that of the first conductivity type well region; a resistive thin film layer provided across a dielectric on the other surface of the second conductivity type well region; a first electrode disposed so as to enclose the resistive thin film layer and connected to the first conductivity type high concentration region; a second electrode, connected to the second conductivity type high concentration region, to which is applied a voltage higher than the voltage applied to the first electrode; and a third electrode, disposed in an inner peripheral side of the first electrode than the resistive thin film layer, to which is applied a voltage higher than the voltage applied to the first electrode and lower than the voltage applied to the second electrode, wherein a first end portion of the resistive thin film layer is connected to the first electrode, while a second end portion of the resistive thin film layer is connected to the third electrode.