PROCESSING SYSTEM FOR COMBINED METAL DEPOSITION AND REFLOW ANNEAL FOR FORMING INTERCONNECT STRUCTURES

摘要

An interconnect conductive metal used in forming an interconnect structure can be formed using a method in which deposition of a metal liner and a reflow anneal are performed in a same multi-chambered processing system without exposing the structure to air between the steps of deposition and reflow annealing. In the disclosure, an interconnect dielectric material including an opening is placed within the multi-chambered processing system and then the interconnect dielectric material is transferred, under vacuum, to a deposition chamber in which the metal liner is deposited. The interconnect dielectric material including the metal liner is then transferred, under the same vacuum, to an annealing chamber in which a reflow anneal is performed.

主权项

1. A method for forming an interconnect structure comprising:
providing an interconnect dielectric material having at least one opening; placing the interconnect dielectric material having the at least one opening within a multi-chambered processing system; performing a pre-cleaning step in a pre-cleaning chamber of said multi-chambered processing system and on said interconnect dielectric material at a temperature from 50° C. to 400° C., wherein said pre-cleaning step removes surface oxides from said interconnect dielectric material; depositing at least a metal liner comprising a conductive metal or conductive metal alloy above an uppermost surface of the interconnect dielectric material and in the at least one opening, wherein said depositing is performed in a deposition chamber of said multi-chambered processing system; and performing a reflow anneal within an annealing chamber of said multi-chambered processing system, wherein said reflow anneal flows a portion of the metal liner located above the uppermost surface of the interconnect dielectric material into the at least one opening and fills said at least one opening with said conductive metal or conductive metal alloy, wherein a continuous vacuum of from 10−5 to 10−10 Torr is maintained during said pre-cleaning, said depositing and said reflow anneal.