SYSTEM AND METHOD OF PROGRAMMING A MEMORY CELL

摘要

A method includes selectively creating a first breakdown condition and a second breakdown condition at a semiconductor transistor structure. The first breakdown condition is between a source overlap region of the semiconductor transistor structure and a gate of the semiconductor transistor structure. The second breakdown condition is between ad rain overlap region of the semiconductor transistor structure and the gate.

主权项

1. An apparatus comprising:
a semiconductor transistor structure including a source overlap region and a drain overlap region, wherein the source overlap region is selectively biasable to create a first breakdown condition between the source overlap region and a gate of the semiconductor transistor structure, and wherein the drain overlap region is selectively biasable to create a second breakdown condition between the drain overlap region and the gate.