ACCESS SIGNAL ADJUSTMENT CIRCUITS AND METHODS FOR MEMORY CELLS IN A CROSS-POINT ARRAY

摘要

Embodiments of the invention relate generally to semiconductors and memory technology, and more particularly, to systems, integrated circuits, and methods to generate access signals to facilitate memory operations in scaled arrays of memory elements, such as memory implemented in third dimensional memory technology formed BEOL directly on top of a FEOL substrate that includes data access circuitry. In at least some embodiments, a non-volatile memory device can include a cross-point array having resistive memory elements disposed among word lines and subsets of bit lines, and an access signal generator. The access signal generator can be configured to modify a magnitude of a signal to generate a modified magnitude for the signal to access a resistive memory element associated with a word line and a subset of bit lines. The modified magnitude can be a function of the position of the resistive memory element in the cross-point array.

主权项

1. A non-volatile memory device, comprising:
a three dimensional array including at least two slices of two-terminal resistive memory elements (MEs), each ME being configured to retain stored data in an absence of electrical power and the at least two slices each extending in at least one of XY, YZ, or XZ planes of the three dimensional array; and an access signal generator configured to generate a modified access signal by modifying a magnitude of an access signal configured to access a selected ME based at least in part on a position of the selected ME in the array.