SEMICONDUCTOR STRUCTURES INCLUDING STACKS OF INDIUM GALLIUM NITRIDE LAYERS

摘要

Methods of forming ternary III-nitride materials include epitaxially growing ternary III-nitride material on a substrate in a chamber. The epitaxial growth includes providing a precursor gas mixture within the chamber that includes a relatively high ratio of a partial pressure of a nitrogen precursor to a partial pressure of one or more Group III precursors in the chamber. Due at least in part to the relatively high ratio, a layer of ternary III-nitride material may be grown to a high final thickness with small V-pit defects therein. Semiconductor structures including such ternary III-nitride material layers are fabricated using such methods.

主权项

1. A semiconductor structure, comprising a stack of layers of III-nitride material, the stack of layers including a plurality of layers of InxGa(1-x)N, wherein x in each layer of InxGa(1-x)N is at least about 0.05 respectively, the stack of layers of III-nitride material having an average total thickness of about one hundred nanometers (100 nm) or more, the stack of layers of III-nitride material comprising a plurality of V-pits therein having an average pit width of about two hundred nanometers (200 nm) or less.