Polymeric Materials for Use in Metal-Oxide-Semiconductor Field-Effect Transistors

摘要

Disclosed are polysulfone-based materials that can be used as active and/or passive components in various electronic, optical, and optoelectronic devices, particularly, metal-oxide-semiconductor field-effect transistors. For example, various metal-oxide-semiconductor field-effect transistors can include a dielectric layer and/or a passivation layer prepared from such polysulfone-based materials and exhibit good device performance.

主权项

1. An optical, electronic or optoelectronic device comprising a thin film transistor, the thin film transistor comprising:
a substrate; a channel layer comprising a metal oxide semiconductor comprising a front surface and a back surface; source and drain electrodes in contact with the channel layer; a gate electrode; a gate dielectric layer disposed between the channel layer and the gate electrode; and a passivation layer in contact with the back surface of the channel layer;wherein at least one of the gate dielectric layer and the passivation layer comprises a polysulfone-based material comprising a polymer having the formula:wherein:W is —Ar[—Y—Ar]q—, wherein:
Ar, at each occurrence, independently is a divalent C6-18 aryl group; Y, at each occurrence, independently is selected from the group consisting of —O—, —S—, —(CR′R″)r—, —C(O)—, and a covalent bond, wherein R′ and R″, at each occurrence, independently are selected from the group consisting of H, a halogen, CN, a C1-10 alkyl group, and a C1-10 haloalkyl group; and r is selected from the group consisting of 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10; and q is selected from the group consisting of 0, 1, 2, 3, 4, 5, 6, 7, 8, 9 and 10;Z and Z′ independently are selected from the group consisting of —O—, —S—, and —Se—;L and L′, at each occurrence, independently are selected from the group consisting of —O—, —S—, a divalent C1-10 alkyl group, a divalent C6-18 aryl group, and a covalent bond;T and T′, at each occurrence, independently are Q or R, wherein:
Q is a crosslinkable group comprising an ethenyl moiety, an ethynyl moiety, a dienyl moiety, an acrylate moiety, a coumarinyl moiety, and an epoxy moiety; and R, at each occurrence, is selected from the group consisting of H, a halogen, a C1-10 alkyl group, a C1-10 haloalkyl group, and a C6-10 aryl group optionally substituted with 1 to 5 substituents independently selected from the group consisting of a halogen and CN;p and p′ independently are selected from the group consisting of 1, 2, 3 and 4; andm and n are real numbers representing mole fractions ranging from 0 to 1, wherein the sum of m and n is about 1.