POLYCRYSTALLINE DIAMOND COMPACTS INCLUDING AT LEAST ONE TRANSITION LAYER AND METHODS FOR STRESS MANAGEMENT IN POLYCRSYSTALLINE DIAMOND COMPACTS

摘要

Embodiments relate to polycrystalline diamond compacts (“PDCs”) that are less susceptible to liquid metal embrittlement damage due to the use of at least one transition layer between a polycrystalline diamond (“PCD”) layer and a substrate. In an embodiment, a PDC includes a PCD layer, a cemented carbide substrate, and at least one transition layer bonded to the substrate and the PCD layer. The at least one transition layer is formulated with a coefficient of thermal expansion (“CTE”) that is less than a CTE of the substrate and greater than a CTE of the PCD layer. At least a portion of the PCD layer includes diamond grains defining interstitial regions and a metal-solvent catalyst occupying at least a portion of the interstitial regions. The diamond grains and the catalyst collectively exhibit a coercivity of about 115 Oersteds or more and a specific magnetic saturation of about 15 Gauss·cm3/grams or less.

主权项

1. A method for manufacturing a polycrystalline diamond compact, comprising:
disposing at least one layer that includes a plurality of diamond grains and at least one additive between at least one layer of diamond grains and a cemented carbide substrate in a pressure transmitting medium to form a cell assembly; and subjecting the cell assembly to a high-temperature/high-pressure (“HPHT”) process of at least 1000° C. and a pressure of at least 7.5 GPa in the pressure transmitting medium to form a polycrystalline diamond compact that includes at least one polycrystalline diamond layer, a cemented carbide substrate, and at least one transition layer disposed between the at least one polycrystalline diamond layer and the cemented carbide substrate; wherein the at least one transition layer is at least partially formed from the at least one layer, and wherein the at least one transition layer exhibits a coefficient of thermal expansion (“CTE”) that is less than a CTE of the cemented carbide substrate and greater than a CTE of the at least one polycrystalline diamond layer.