| 摘要 |
Provided is a Group-III nitride semiconductor light emitting element in which the cracking in an active layer is inhibited and which exhibits an improved luminous output. This Group-III nitride semiconductor light emitting element (100) comprises an n-type cladding layer (14), an active layer (20) and a p-type cladding layer (16) successively. The active layer (20) has a multiple quantum well structure wherein barrier layers (22) made of AlxGa1-xN (wherein 0≤x<1) and well layers (24) made of a Group-III nitride semiconductor are alternately laminated. The Al contents (X) of the barrier layers (22) increase gradually from a reference barrier layer toward the first barrier layer (22A) present on the n-type cladding layer (14) side and toward the second barrier layer (22B) present on the p-type cladding layer (16) side, said reference barrier layer being an intermediate barrier layer having the minimum Al content (Xmin) among the intermediate barrier layers (22C). The Al content (X1) of the first barrier layer (22A), the Al content (X2) of the second barrier layer (22B), and Xmin satisfy the relationships: X2 + 0.01 ≤ X1 and Xmin + 0.03 ≤ X2. |
