发明名称 SEMICONDUCTOR DEVICE
摘要 The present invention provides a semiconductor device including a capacitor element which has a high opening ratio and is capable of increasing the charge capacity. The semiconductor device comprises a transistor on a substrate; a first light-transmitting conductive film on the substrate; an oxide insulating film covering the transistor and having an opening formed on the first light-transmitting conductive film; a nitride insulating film on the oxide insulating film, which is in contact with the first light-transmitting conductive film at the opening; a second light-transmitting conductive film connected to the transistor and having a concave portion formed in the opening; and an organic resin film filling the concave portion of the second light-transmitting conductive film.
申请公布号 KR20140097986(A) 申请公布日期 2014.08.07
申请号 KR20140008825 申请日期 2014.01.24
申请人 SEMICONDUCTOR ENERGY LABORATORY CO., LTD. 发明人 KUBOTA DAISUKE;HATSUMI RYO;JINTYOU MASAMI;SHIGENOBU TAKUMI;GOTO NAOTO
分类号 G02F1/1362;G02F1/1368;H01L29/786 主分类号 G02F1/1362
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