发明名称 |
SEMICONDUCTOR DEVICE |
摘要 |
The present invention provides a semiconductor device including a capacitor element which has a high opening ratio and is capable of increasing the charge capacity. The semiconductor device comprises a transistor on a substrate; a first light-transmitting conductive film on the substrate; an oxide insulating film covering the transistor and having an opening formed on the first light-transmitting conductive film; a nitride insulating film on the oxide insulating film, which is in contact with the first light-transmitting conductive film at the opening; a second light-transmitting conductive film connected to the transistor and having a concave portion formed in the opening; and an organic resin film filling the concave portion of the second light-transmitting conductive film. |
申请公布号 |
KR20140097986(A) |
申请公布日期 |
2014.08.07 |
申请号 |
KR20140008825 |
申请日期 |
2014.01.24 |
申请人 |
SEMICONDUCTOR ENERGY LABORATORY CO., LTD. |
发明人 |
KUBOTA DAISUKE;HATSUMI RYO;JINTYOU MASAMI;SHIGENOBU TAKUMI;GOTO NAOTO |
分类号 |
G02F1/1362;G02F1/1368;H01L29/786 |
主分类号 |
G02F1/1362 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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