| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a method for manufacturing a gallium oxide substrate, a light emitting device, and a method for manufacturing the light emitting device.SOLUTION: A light emitting device according to the embodiment comprises: a gallium oxide substrate; a gallium oxide nitride base film on the gallium oxide substrate; a first conductive type semiconductor layer on the gallium oxide nitride base film; an active layer on the first conductive type semiconductor layer; and a second conductive type semiconductor layer on the active layer.</p> |
