发明名称 |
COMPOUND SEMICONDUCTOR SINGLE CRYSTAL, COMPOUND SEMICONDUCTOR WAFER AND METHOD FOR PRODUCING COMPOUND SEMICONDUCTOR SINGLE CRYSTAL |
摘要 |
PROBLEM TO BE SOLVED: To provide a method that may produce many elements of excellent properties having a group III-V compound semiconductor single crystal having a component of low melting point and low dissociation pressure such as InSb and GaSb as a substrate at a time from a large single crystal.SOLUTION: A single crystal is grown as follows: raw materials are charged in a heat resistant vessel having a cylindrical side wall with an inner diameter of more than 6 inches. The vessel is disposed in a furnace and the raw material is melt by heating the inside of the furnace without using a sealant to suppress an evaporation of a group V element. The temperature in the furnace is controlled so that the temperature of the melt decreases vertically upward from the beneath at the rate of less than 10°C/cm to solidify the melt from the surface of the melt toward downward at the rate of 1 to 10 mm/h. |
申请公布号 |
JP2014141355(A) |
申请公布日期 |
2014.08.07 |
申请号 |
JP20130008944 |
申请日期 |
2013.01.22 |
申请人 |
JX NIPPON MINING & METALS CORP |
发明人 |
ASAHI TOSHIAKI;MIKAMI MITSURU |
分类号 |
C30B29/40;C30B11/02 |
主分类号 |
C30B29/40 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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