| 摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device or the like having a high aperture ratio and including a capacitor capable of increasing capacitance.SOLUTION: A semiconductor device includes: a transistor including a gate insulating film, an oxide semiconductor film, a gate electrode partly overlapping with the oxide semiconductor film, and a pair of electrodes in contact with the oxide semiconductor film; a capacitor including a first light-transmitting conductive film over the gate insulating film, a dielectric film over the first light-transmitting conductive film, and a second light-transmitting conductive film over the dielectric film; an oxide insulating film over the pair of electrodes of the transistor; and a nitride insulating film over the oxide insulating film. The dielectric film is the nitride insulating film, the oxide insulating film has a first opening over one of the pair of electrodes, and the first light-transmitting conductive film, respectively, the nitride insulating film has a second opening over the one of the pair of electrodes, and the second opening is on an inner side than the first opening. |
