| 发明名称 |
Package Structure and Methods of Forming Same |
| 摘要 |
A semiconductor device includes a first die having a first active surface and a first backside surface opposite the first active surface, a second die having a second active surface and a second backside surface opposite the second active surface, and an interposer, the first active surface of the first die being electrically coupled to a first side of the interposer, the second active surface of the second die being electrically coupled to a second side of the interposer. The semiconductor device also includes a first connector over the interposer, a first encapsulating material surrounding the second die, the first encapsulating material having a first surface over the interposer, and a via electrically coupling the first connector and the interposer. A first end of the via is substantially coplanar with the first surface of the first encapsulating material. |
| 申请公布号 |
US2014217604(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201313758665 |
申请日期 |
2013.02.04 |
| 申请人 |
MANUFACTURING COMPANY, LTD. TAIWAN SEMICONDUCTOR |
发明人 |
Chou Bruce C.S.;Lin Chih-Hsien;Lu Hsiang-Tai;Tu Jung-Kuo;Hsieh Tung-Hung;Lin Chen-Hua;Liu Mingo |
| 分类号 |
H01L23/48;H01L23/00 |
主分类号 |
H01L23/48 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A semiconductor device comprising:
a first die comprising a first active surface and a first backside surface opposite the first active surface; a second die comprising a second active surface and a second backside surface opposite the second active surface; an interposer, the first active surface of the first die being electrically coupled to a first side of the interposer, the second active surface of the second die being electrically coupled to a second side of the interposer; a first connector over the interposer; a first encapsulating material surrounding the second die, the first encapsulating material having a first surface over the interposer; and a via electrically coupling the first connector and the interposer, wherein a first end of the via is substantially coplanar with the first surface of the first encapsulating material. |
| 地址 |
US |
