| 摘要 |
This method for producing an infrared radiation reflecting film comprises, in order: a metal layer forming step in which a metal layer (25) is formed on a transparent film substrate (10); a metal oxide layer forming step in which a surface-side metal oxide layer (22) is formed by DC sputtering so as to be in direct contact with the metal layer (25); and a transparent protective layer forming step in which a transparent protective layer (30) is formed on the surface-side metal oxide layer (22). In the metal oxide layer forming step, a sputtering target used for DC sputtering contains zinc atoms and tin atoms, and is preferably formed by sintering at least one metal oxide among zinc oxide and tin oxide, and a metal powder. In the surface-side metal oxide forming step, an inert gas and an oxygen gas are introduced inside a sputtering film-forming chamber. The oxygen concentration in the gas introduced to the sputtering film-forming chamber is preferably not more than 8 vol%. |
