| 摘要 |
<p>The present invention provides an oxide semiconductor layer having a low defect density. The present invention also provides a semiconductor device having an oxide semiconductor layer of a low defect density. The method relates to a method of processing an oxide semiconductor layer having indium, gallium, and zinc. The oxide semiconductor layer has a first oxygen loss close to first indium and in which firs hydrogen is captured and a second oxygen loss close to second indium and in which second hydrogen is captured, and the oxide semiconductor layer has a plurality of surplus oxygen. The first hydrogen captured in the first oxygen loss is coupled to one of the plurality of surplus oxygen to form a hydroxyl group. The hydroxyl group is coupled to the second hydrogen captured in the second oxygen loss to be converted into water and separated, and then the first oxygen loss captures one of the plurality of surplus oxygen, and the second oxygen loss captures one of the plurality of surplus oxygen.</p> |
