NITRIDE SEMICONDUCTOR LIGHT-EMITTING ELEMENT

摘要

PROBLEM TO BE SOLVED: To reduce an operating voltage of a nitride semiconductor light-emitting element.SOLUTION: A nitride semiconductor light-emitting element comprises an active layer provided between a lower nitride semiconductor contact layer and an upper nitride semiconductor contact layer. At least one of the lower nitride semiconductor contact layer and the upper nitride semiconductor contact layer has a periodic structure in which a structure composed of a plurality types of layers including at least two types of nitride semiconductor layers having bandgap energy different from each other is one cycle. The nitride semiconductor layer having the periodic structure among the lower nitride semiconductor contact layer and the upper nitride semiconductor contact layer is modulation-doped with an impurity having a conductivity type and contacts an electrode at a plane which is not perpendicular to a lamination direction in the periodic structure.