| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming an ion implanted region in a semiconductor device.SOLUTION: The method comprises the steps of: (a) providing a semiconductor substrate having a plurality of regions to be ion implanted; (b) forming a photoresist pattern on the semiconductor substrate, in which the photoresist pattern is formed from a chemically amplified photoresist composition comprising a matrix polymer having an acid-labile group, a photoacid generator and a solvent; (c) applying a descumming composition over the photoresist pattern, in which the descumming composition comprises a matrix polymer, an acid generator and a solvent; (d) subjecting the coated semiconductor substrate to the conditions to generate an acid from the acid generator into the descumming composition; (e) bringing the coated semiconductor substrate with a rinsing agent to remove a residual descumming composition and scum from the substrate; and (f) ion implanting the plurality of regions of the semiconductor substrate using the photoresist pattern as an implant mask. |
