| 摘要 |
PROBLEM TO BE SOLVED: To provide a manufacturing method of a semiconductor device having a more highly reliable memory cell; and solve a problem of high resistance caused because there is no silicide film on a top face of polycrystalline silicon.SOLUTION: A semiconductor device manufacturing method comprises: forming first and second laminate structures PE1, PE2 of a memory cell formation region to be higher than a height of a third laminate structure PE3 of a peripheral transistor formation region; and subsequently, forming an interlayer insulation layer II so as to cover the first and second and third laminate structures and polishing the interlayer insulation layer II. In the case where the first and second dummy electrodes PE1, PE2 are formed thicker in comparison with the third dummy electrode PE3, by polishing a top face of the third dummy electrode PE3, top faces of the first and second electrodes are also polished, and the first and second dummy electrodes PE1, PE2 are successfully removed through openings in the post-process. |
