SUBSTRATE PROCESSING DEVICE, SEMICONDUCTOR MANUFACTURING METHOD AND SUBSTRATE PROCESSING METHOD

摘要

PROBLEM TO BE SOLVED: To improve an operation rate of a substrate processing device by reducing maintenance frequency of cumulative film removal.SOLUTION: A substrate processing device comprises: a processing chamber 34 for accommodating a substrate holder 13 which holds a substrate 2, therein and forming a film over the substrate; heating means 32 for heating the substrate and an atmosphere within the processing chamber; gas supply means 35a, 35b for supplying gas into the processing chamber; gas exhaust means 42 for exhausting the gas out of the processing chamber; transfer means for transferring the substrate to the substrate holder; and a control section 31 for controlling the heating means, the gas supply means, the gas exhaust means and the transfer means so as to perform in parallel a transfer step of transferring the substrate from the substrate holder carried out of the processing chamber, and a foreign substance removal step of removing foreign substances within the processing chamber by raising a temperature within the processing chamber to a first temperature exceeding a processing temperature at which the substrate is processed, then lowering the temperature to a second temperature lower than the processing temperature and repeating pressure rise and fall within the processing chamber.