ORGANIC THIN-FILM TRANSISTOR, ORGANIC SEMICONDUCTOR THIN FILM, AND ORGANIC SEMICONDUCTOR MATERIAL

摘要

An organic thin-film transistor in which a compound that can be represented by general formula (1-1) or (1-2) is used in a semiconductor active layer exhibits high carrier mobility and little change in threshold voltage after being driven repeatedly. (In the formulas, X represents a sulfur or oxygen atom; R1 through R6 each represent a hydrogen atom or a substituent, with at least one of R1 through R6 representing a substituent that can be represented by general formula (W); L represents a specific divalent linking group; and R represents a substituted or unsubstituted alkyl group that has at least a specific number of carbon atoms (there are a total of at least four carbon atoms in alkyl groups in -L-R), an oligo-oxyethylene group in which the number (v) of oxyethylene repeating units is at least two, or an oligosiloxane group or substituted or unsubstituted trialkylsilyl group that has two or more silicon atoms.) General formula (1-1) General formula (1-2) General formula (W) -L-R