FORMATION OF A COMPOSITE PATTERN INCLUDING A PERIODIC PATTERN SELF-ALIGNED TO A PREPATTERN

摘要

A chemical pattern layer (32, 33) including an orientation control material (32) and a prepattern material (33) is formed over a substrate (10). The chemical pattern layer (32, 33) includes alignment-conferring features (33D) and additional masking features (33S). A self-assembling material is applied and self-aligned over the chemical pattern layer. The polymeric block components align to the alignment-conferring features, while the alignment is not altered by the additional masking features. A first polymeric block component (40) is removed selective to a second polymeric block component (50) by an etch to form second polymeric block component portions having a pattern. A composite pattern of the pattern of an etch-resistant material within the chemical pattern layer and the pattern of the second polymeric block component portions can be transferred into underlying material layers employing at least another etch.