NONVOLATILE MEMORY DEVICE AND METHOD OF FABRICATING THE SAME

摘要

In a nonvolatile memory device and a method for fabricating the same, a device comprises a substrate, a trench in the substrate and a first gate pattern comprising a first bottom gate electrode having a first portion in the trench and having a second portion on the first portion and protruding in an upward direction relative to an upper surface of the substrate. A second gate pattern comprising a second gate electrode is on the substrate at a side of the first gate pattern and insulated from the first gate pattern. An impurity region is present in the substrate at a side of the first gate pattern opposite the second gate pattern, and overlapping part of the trench.

主权项

1. A nonvolatile memory device comprising:
a substrate; a trench in the substrate; a first gate pattern comprising a first bottom gate electrode having a first portion in the trench and having a second portion on the first portion and protruding in an upward direction relative to an upper surface of the substrate; a second gate pattern comprising a second gate electrode on the substrate at a side of the first gate pattern and insulated from the first gate pattern; an inter-pattern spacer on a side of the first gate pattern contacting the second gate pattern; and an impurity region in the substrate at a side of the first gate pattern opposite the second gate pattern, and overlapping part of the trench.