| 发明名称 |
Ga2O3 SEMICONDUCTOR ELEMENT |
| 摘要 |
Provided is a high-quality Ga2O3 semiconductor element. Provided is, as one embodiment of the present invention, a Ga2O3 MESFET (10), which includes: an n-type α-(AlxGa1-x)2O3 single crystal film (3), which is formed on an α-Al2O3 substrate (2) directly or with other layer therebetween, and is composed of an α-(AlxGa1-x)2O3 single crystal (0≦x≦1); a source electrode (12) and a drain electrode (13), which are formed on the n-type α-(AlxGa1-x)2O3 single crystal film (3); and a gate electrode (11), which is formed on a region between the source electrode (12) and the drain electrode (13) on the n-type α-(AlxGa1-x)2O3 single crystal film (3). |
| 申请公布号 |
US2014217471(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201214343660 |
申请日期 |
2012.09.07 |
| 申请人 |
Sasaki Kohei;Higashiwaki Masataka;Fujita Shizuo |
发明人 |
Sasaki Kohei;Higashiwaki Masataka;Fujita Shizuo |
| 分类号 |
H01L29/78 |
主分类号 |
H01L29/78 |
| 代理机构 |
|
代理人 |
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| 主权项 |
1. A Ga2O3-based semiconductor element, comprising:
an α-(AlxGa1-x)2O3 single crystal film that comprises an α-(AlxGa1-x)2O3 single crystal (0≦x≦1) and is formed on an α-Al2O3 substrate directly or via an other layer; a source electrode and a drain electrode that are formed on the α-(AlxGa1-x)2O3 single crystal film; and a gate electrode that is formed on a region between the source electrode and the drain electrode of the α-(AlxGa1-x)2O3 single crystal film. |
| 地址 |
Tokyo JP |
