| 发明名称 |
SILICON SUBSTRATE WITH TEXTURE STRUCTURE AND FORMING METHOD THEREOF |
| 摘要 |
A silicon substrate includes a texture structure in which quadrangular pyramid-shaped first textures having a (111) plane on slopes are formed on a surface of the silicon substrate having a plane orientation (100) and second textures having etch pits surrounded by three planes of the (100) plane, a (010) plane and a (001) plane are formed on surfaces of the first textures. |
| 申请公布号 |
US2014216541(A1) |
申请公布日期 |
2014.08.07 |
| 申请号 |
US201414164262 |
申请日期 |
2014.01.27 |
| 申请人 |
Panasonic Corporation |
发明人 |
YAMAGUCHI Naoshi;TANABE Hiroshi |
| 分类号 |
H01L31/0236;H01L21/306 |
主分类号 |
H01L31/0236 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A silicon substrate with a texture structure, the silicon substrate comprising:
quadrangular pyramid-shaped first textures having a (111) plane on slopes formed on a surface of the silicon substrate having a plane orientation (100); and second textures having etch pits including a (100) plane, a (010) plane and a (001) plane formed on surfaces of the first textures. |
| 地址 |
Osaka JP |
