| 摘要 |
PROBLEM TO BE SOLVED: To increase a withstanding voltage of a dielectric layer constituting a storage capacitance, to form a thinner dielectric layer and to alleviate reduction in a capacitance value of a storage capacitance in a reduced area of the storage capacitance responding to a demand for higher density of pixels.SOLUTION: An electro-optic device comprises: a TFT30; and a pixel electrode 9 and a storage capacitance 70 electrically connected to the TFT 30, in which the storage capacitance 70 includes a first capacitance electrode 2, a second capacitance electrode 5, and a dielectric layer 7 disposed between the first capacitance electrode 2 and the second capacitance electrode 5. The first capacitance electrode 2 and the second capacitance electrode 5 are made of the same material. The dielectric layer 7 comprises a hafnium oxide film H and an aluminum oxide film A, in which the hafnium oxide film H and the aluminum oxide film A are alternately layered; and in the dielectric layer 7, a film disposed on a side close to the first capacitance electrode 2, and a film disposed on a side close to the second capacitance electrode 5 are hafnium oxide films H. |
