| 摘要 |
PROBLEM TO BE SOLVED: To form an electrode capable of suppressing increase in contact resistance due to etching in a GaN-based N-type semiconductor layer. ! SOLUTION: A method for manufacturing a semiconductor device comprises the steps of: (a) forming an N-type semiconductor layer mainly composed of gallium nitride (GaN); and (b) forming an electrode on the N-type semiconductor layer. The step (b) further includes the steps of: (b1) forming a first metal layer in the N-type semiconductor layer; (b2) laminating a second metal layer on the first metal layer; (b3) laminating a third metal layer on the second metal layer so that the relationship between a thickness T2 of the second metal layer and a thickness T3 of the third metal layer satisfies T2/T3<10; and (b4) forming an electrode by burning the first metal layer, the second metal layer, and the third metal layer. ! COPYRIGHT: (C)2014,JPO&INPIT |
