Doping Control of Metal Nitride Films

摘要

Described are methods for controlling the doping of metal nitride films such as TaN, TiN and MnN. The temperature during deposition of the metal nitride film may be controlled to provide a film density that permits a desired amount of doping. Dopants may include Ru, Cu, Co, Mn, Mo, Al, Mg, Cr, Nb, Ta, Ti and V. The metal nitride film may optionally be exposed to plasma treatment after doping.

主权项

1. A method for depositing a doped metal nitride film on a substrate, the method comprising:
depositing a metal nitride film on the substrate at a temperature selected to provide a film having a predetermined film density; and exposing the metal nitride film to a dopant metal precursor to form a doped metal nitride film.