SEMICONDUCTOR MODULE, CIRCUIT BOARD

摘要

An improvement in the manufacturing efficiency of a circuit substrate and a semiconductor module where a semiconductor device including electrodes on a front and a back surface is mounted.;[Solution] A semiconductor module includes a wiring substrate where a via and a interconnecting pattern are formed, a semiconductor device disposed on a first surface side of the wiring substrate, and a bonding portion including a first bonding layer disposed on the wiring substrate side and a second bonding layer disposed on the semiconductor device side. The first bonding layer includes a first insulation layer having inorganic material as the main constituent, a through hole formed in an area of the first insulation layer corresponding to the via, and a conductive bonding portion, disposed in the through hole, for establishing electrical continuity between an electrode portion formed on the semiconductor device and the wiring substrate, and has a first bonding start temperature to start bonding to the wiring substrate, and the second bonding layer includes a second insulation layer having inorganic material as the main constituent, and an opening portion communicating with the through hole and configured to dispose the semiconductor device therein, and has a second bonding start temperature being a temperature to start bonding to the semiconductor device, the temperature being different from the first bonding start temperature.

主权项

1. A semiconductor module comprising:
a wiring substrate where a via and a interconnecting pattern are formed; a semiconductor device disposed on a first surface side of the wiring substrate; and a bonding portion, disposed on the first surface of the wiring substrate, for bonding the semiconductor device and the wiring substrate, the bonding portion including a first bonding layer disposed on the wiring substrate side, and a second bonding layer disposed on the semiconductor device side, wherein the first bonding layer includes
a first insulation layer having inorganic material as a main constituent,at least one through hole formed in an area of the first insulation layer corresponding to the via, anda conductive bonding portion, disposed in the through hole, for establishing electrical continuity between an electrode portion formed on the semiconductor device and the wiring substrate, andhas a first bonding start temperature being a temperature to start bonding to the wiring substrate; and the second bonding layer includes
a second insulation layer having inorganic material as a main constituent, andan opening portion communicating with the through hole and configured to dispose the semiconductor device therein, andhas a second bonding start temperature being a temperature to start bonding to the semiconductor device, the temperature being different from the first bonding start temperature.