| 摘要 |
An organic thin-film transistor that contains a compound that can be represented by general formula (1) in a semiconductor active layer exhibits high carrier mobility and little change in threshold voltage after being driven repeatedly. (In general formula (1), Z represents a substituent that has a length of at most 3.7 Å from the nitrogen atom to the end of the substituent, and R1 through R8 each represent a hydrogen atom or a substituent, with at least one of R1 through R8 representing a substituent that can be represented by general formula (W) (in which L represents a single bond or a specific divalent linking group and R represents a substituted or unsubstituted C2+ alkyl group, an oligo-oxyethylene group that has two or more oxyethylene repeating units, or an oligosiloxane group that has two or more silicon atoms).) General formula (1) General formula (W) -L-R |
