CR-DOPED MN-SI THERMOELECTRIC MATERIAL AND MANUFACTURING METHOD FOR THE SAME

摘要

The present invention relates to a Cr-doped Mn-Si thermoelectric material. The Mn-Si thermoelectric material with a composition of MnSi1.75-δ(0<=δ<=0.03) is doped with Cr. Also, The present invention relates to a method for manufacturing the Cr-doped Mn-Si thermoelectric material which includes a first step of mixing Mn powder and Si powder prepared with the composition of MnSi1.75-δ(0<=δ<=0.03) and Cr powder prepared as a dopant as material powder; a second step of forming higher manganese silicides phase with regard to the mixed raw material powder; and a third step of sintering thermoelectric material powder with the higher manganese silicides phase. The present invention provides Mn-Si thermoelectric materials with improved thermoelectric performance by using Cr as a dopant replaced by Mn. Also, the described method for manufacturing the Cr-doped Mn-Si thermoelectric material manufactures a Cr-added Mn-Si thermoelectric material with high thermoelectric performance by controlling MnSi phase.