| 摘要 |
A vertical type light emitting device is provided to prevent leakage current and improve optical characteristic of the light emitting device by using a passivation layer. A vertical type light emitting device includes a multi-layer semiconductor layer(20), a first electrode(40), a passivation layer(50) and a reflective metal layer. The first electrode is located on the semiconductor layer. The passivation layer is at least located at a portion of an exposed surface of the semiconductor layer. The passivation layer has a refractive index of n which is smaller than that of the semiconductor layer. When a light emitting wavelength of the semiconductor layer is assumed to be lambda, the passivation layer has a thickness of lambda/8n ~ lambda/2n. The reflective metal layer contacts with the first electrode. The reflective metal layer is located at an outer side of the passivation layer. |
