发明名称 POWER SEMICONDUCTOR MODULE
摘要 PROBLEM TO BE SOLVED: To increase positional deviation tolerance of a connection member in a horizontal direction.SOLUTION: In a power semiconductor module 200, an almost columnar gate signal relay member 120 extending in an upward and downward direction is jointed to a gate electrode 102b by a solder 121a in order to electrically connect the gate electrode 102b on an upper face of a power semiconductor chip 102 and a connection member 111 formed of a sheet metal material. A through hole 111b1 is formed at a horizontal tip side portion 111b of the connection member 111, and a profile C111b1 of the through hole 111b1 projected in the upward and downward direction is made smaller than a profile C120b1 of an upper end 120b1 of an upper portion 120b of the gate signal relay member 120 projected in the upward and downward direction. The solder 121b is arranged on the upper end 120b1, and the connection member 111 is positioned in the horizontal direction to the gate signal relay member 120, so that the profile C111b1 of the through hole 111b1 projected on the upward and downward direction is positioned inside a profile C120b1 of the upper end 120b1 projected in the upward and downward direction.
申请公布号 JP2014143282(A) 申请公布日期 2014.08.07
申请号 JP20130010397 申请日期 2013.01.23
申请人 NIPPON INTER ELECTRONICS CORP 发明人 INAGE HIKOFUMI
分类号 H01L25/07;H01L25/18 主分类号 H01L25/07
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