MEMORY ELEMENT, SEMICONDUCTOR DEVICE AND WRITING METHOD

摘要

PROBLEM TO BE SOLVED: To obtain a memory element capable of enhancing reliability of information having been memorized, when the memory element is configured by using both an electric fuse and an anti-fuse.SOLUTION: A memory element includes: an electric fuse 11 inserted between a first input node and a second input node; and an anti-fuse 12 inserted between the second input node and a third input node configured so that a voltage different from a voltage applied on the first input node can be applied thereon. Different voltages can be applied on the first input node and the third input node, so that reliability of information having been memorized can be enhanced.