发明名称 |
Multi-Direction Design for Bump Pad Structures |
摘要 |
An integrated circuit structure includes a semiconductor chip having a first region and a second region; a dielectric layer formed on the first region and the second region of the semiconductor chip; a first elongated under-bump metallization (UBM) connector formed in the dielectric layer and on the first region of the semiconductor chip and having a first longer axis extending in a first direction; and a second elongated UBM connector formed in the dielectric layer on the second region of the semiconductor chip and having a second longer axis extending in a second direction. The first direction is different from the second direction. |
申请公布号 |
US2014220776(A1) |
申请公布日期 |
2014.08.07 |
申请号 |
US201414247016 |
申请日期 |
2014.04.07 |
申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Chen Chih-Hua;Chen Chen-Shien;Kuo Chen-Cheng;Liu Tzuan-Horng |
分类号 |
H01L23/00 |
主分类号 |
H01L23/00 |
代理机构 |
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代理人 |
|
主权项 |
1. A method, comprising:
forming a first metal pad and a second metal pad over a substrate; forming a dielectric layer over the substrate, over the first metal pad and over the second metal pad, the dielectric layer having a first opening exposing a portion of the first metal pad and a second opening exposing a portion of the second metal pad; forming a first under-bump metallization (UBM) connector in the first opening and contacting the first metal pad; forming a second UBM connector in the second opening and contacting the second metal pad; wherein the first UBM connector has a first longest axis aligned in a first orientation; and wherein the second UBM connector has a second longest axis aligned in a second orientation different from the first orientation. |
地址 |
Hsin-Chu TW |